HT Semiconductor mmbta05 free download

File name mmbta05.pdf

MMBTA05 TRANSISTOR(NPN) SOT-23 FEATURES Driver transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING :1H MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 0.5 A PC Collector Power Dissipation 300 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 4 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 A Collector cut-off current ICEO VCE=60V, IB=0 0.1 A Collector cut-off current IEBO VEB=3V, IC=0 0.1 A hFE1 VCE=1V, IC= 10mA 100 400 DC current gain hFE2 VCE=1V, IC= 100mA 100 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.25 V Base-emitter voltage VBE VCE=1V, IC= 100mA 1.2 V VCE= 2V, IC=10mA Transition frequency fT 100 MHz f=100MHz 1 JinYu